1.5-µm optical up-conversion: wafer fusion and related issues

Dayan Ban; Hui Luo; Hui-Chun Liu; Anthony J. SpringThorpe; Zbigniew R. Wasilewski; Andrew Bezinger; Alexei Bogdanov; Margaret Buchanan

doi:10.1117/12.561087

4 November 2004 1.5-μm optical up-conversion: wafer fusion and related issues

Dayan Ban, Hui Luo, Hui-Chun Liu, Anthony J. SpringThorpe, Zbigniew R. Wasilewski, Andrew Bezinger, Alexei Bogdanov, Margaret Buchanan

Author Affiliations +

Proceedings Volume 5543, Infrared Spaceborne Remote Sensing XII; (2004) https://doi.org/10.1117/12.561087
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

Imaging devices working in the near infrared (NIR), especially in the so-called eye-safe range, i.e., around 1.5 mm, have become increasingly important in many military and commercial applications; these include night vision, covert surveillance, range finding and semiconductor wafer inspection. We proposed a new approach in which a wafer-fused optical up-converter, combined with a commercially available charged coupled device (CCD), functions as an infrared camera. The optical up-converter converts incoming infrared light into shorter wavelength radiation that can be efficiently detected by the silicon CCD (cutoff wavelength about 1 mm). An optical up-converter with high efficiency at room-temperature is critical for low cost and large-area infrared imaging applications. A prototype 1.5 mm optical up-converter based on wafer fusion technology has been successfully fabricated. The device consists of an InGaAs/InP pin photodetector and a GaAs/AlGaAs light emitting diode. Experimental results show that the end-to-end up-conversion efficiency is 0.0177 W/W at room-temperature, corresponding to an internal quantum up-conversion efficiency of 76%. In this paper, the design, fabrications and characterization of the optical up-conversion devices is presented. Issues related to device optimization, such as improving internal and external up-conversion efficiency, are addressed. Preliminary results demonstrate the room-temperature up-conversion imaging operation of a pixelated wafer-fused device.

Citation Download Citation

Dayan Ban, Hui Luo, Hui-Chun Liu, Anthony J. SpringThorpe, Zbigniew R. Wasilewski, Andrew Bezinger, Alexei Bogdanov, and Margaret Buchanan "1.5-μm optical up-conversion: wafer fusion and related issues", Proc. SPIE 5543, Infrared Spaceborne Remote Sensing XII, (4 November 2004); https://doi.org/10.1117/12.561087

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available