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4 November 2004 InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD
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Abstract
Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared remote sensing. Quantum dot infrared photodetectors (QDIPS) have been predicted to have better performanc than QWIPs due to the novel properties of quantum dots caused by the extra confinement. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition. The device structure consists of multiple stacks of InAs quantum dots with GaAs/AlInAs/InP barrier. 400μx400μm test mesas were fabricated for device characterizations. Photoresponse was observed with a peak wavelength of 6.4 μm and a cutoff wavelength of 6.6 μm at both 77K and 100K. A detectivity of 1.0x1010 cmHz1/2/W was obtained at 77K at a bias of -1.1. V. To the best of our knowledge, this is the highest detectivity reported for InAs QDIP grown on InP substrate. At 100K, the detectivity only drops to 2.3x109cmHz1/2/W.
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Wei Zhang, Hochul Lim, Stanley Tsao, Kan Mi, Bijan Movaghar, Thomas Sills, Jutao Jiang, and Manijeh Razeghi "InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD", Proc. SPIE 5543, Infrared Spaceborne Remote Sensing XII, (4 November 2004); https://doi.org/10.1117/12.561377
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