4 November 2004 Laser cooling of semiconductors using three-photon excitation
Author Affiliations +
Abstract
An energy-balance equation for excited carriers and phonons is established for studying the laser cooling of wide-bandgap semiconductors using three-photon excitation process. The power-exchange densities of the system are calculated for different strengths of the excitation filed. When the power-exchange density is positive, it implies laser cooling of the lattice. The effects of initial lattice temperature and field-frequency detuning on the laser-cooling phenomenon under the three-photon excitation process is demonstrated. The power-exchange densities are compared for both laser cooling and heating using nonlinear excitation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tzveta Apostolova, Danhong Huang, Paul M. Alsing, David A. Cardimona, "Laser cooling of semiconductors using three-photon excitation", Proc. SPIE 5543, Infrared Spaceborne Remote Sensing XII, (4 November 2004); doi: 10.1117/12.561443; https://doi.org/10.1117/12.561443
PROCEEDINGS
6 PAGES


SHARE
Back to Top