4 November 2004 Performance characterization of an InGaAs/InP single photon avalanche diode
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Abstract
III-V based single photon avalanche diodes (SPADs), avalanche photodiodes (APDs) operated in Geiger-mode, are ideally suited for ultra-weak signal detection in the near infrared for photon counting and photon timing applications. Spaceborne SPADs would provide a rugged, compact alternative to photomultiplier tubes with lower operating voltage requirements, stronger near-IR response, and the possibility for array implementation. Results from a performance characterization of an in-house fabricated In0.53Ga0.47As/InP SPAD are presented. Sensitivity (NEP) and timing resolution (δt) were investigated as a function of bias from T = 135 K to 165 K; an NEP ≈ 5 x 1015W/Hz1/2 at T = 150 K and δt ≈ 230 ps at T = 165 K were measured for λ = 1.55 μm light.
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Christian P. Morath, Kenneth Vaccaro, William R. Clark, William A. Teynor, Mark A. Roland, William Bailey, "Performance characterization of an InGaAs/InP single photon avalanche diode", Proc. SPIE 5543, Infrared Spaceborne Remote Sensing XII, (4 November 2004); doi: 10.1117/12.562174; https://doi.org/10.1117/12.562174
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