4 November 2004 Performance characterization of an InGaAs/InP single photon avalanche diode
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III-V based single photon avalanche diodes (SPADs), avalanche photodiodes (APDs) operated in Geiger-mode, are ideally suited for ultra-weak signal detection in the near infrared for photon counting and photon timing applications. Spaceborne SPADs would provide a rugged, compact alternative to photomultiplier tubes with lower operating voltage requirements, stronger near-IR response, and the possibility for array implementation. Results from a performance characterization of an in-house fabricated In0.53Ga0.47As/InP SPAD are presented. Sensitivity (NEP) and timing resolution (δt) were investigated as a function of bias from T = 135 K to 165 K; an NEP ≈ 5 x 1015W/Hz1/2 at T = 150 K and δt ≈ 230 ps at T = 165 K were measured for λ = 1.55 μm light.
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Christian P. Morath, Christian P. Morath, Kenneth Vaccaro, Kenneth Vaccaro, William R. Clark, William R. Clark, William A. Teynor, William A. Teynor, Mark A. Roland, Mark A. Roland, William Bailey, William Bailey, } "Performance characterization of an InGaAs/InP single photon avalanche diode", Proc. SPIE 5543, Infrared Spaceborne Remote Sensing XII, (4 November 2004); doi: 10.1117/12.562174; https://doi.org/10.1117/12.562174

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