Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications

Ashok K. Sood; Elwood James Egerton; Yash R. Puri; Frederick W. Clarke Jr.; James C.M. Hwang; Amir Dabiran; Peter Chow; Tom Anderson; Avi Gupta; Andy Souzis; Ilya Zwieback

doi:10.1117/12.561584

20 October 2004 Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications

Ashok K. Sood, Elwood James Egerton, Yash R. Puri, Frederick W. Clarke Jr., James C.M. Hwang, Amir Dabiran, Peter Chow, Tom Anderson, Avi Gupta, Andy Souzis, Ilya Zwieback

Author Affiliations +

Proceedings Volume 5550, Free-Space Laser Communications IV; (2004) https://doi.org/10.1117/12.561584
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

GaN /AlGaN transistors are being developed for a variety of RF electronic and high temperature elctronics applications that will replace GaAs and Silicon devices and circuits for commercial and military applications. AlGaN/ GaN based HEMT device structure shows significant potential to meet these needs. In this paper, we present a GaN/AlGaN based HEMT design with modeling results, that includes AlN buffer layer followed by AlGaN layers on lattice matched semi-insulating SiC substrates. These devices were grown using RF Plasma Assisted MBE Technique. This approach has demonstrated very uniform epitaxial layers. Key to high quality HEMT structures is the ability to grow high quality AlN Buffer layers. Details of the electrical and optical characteristics of the HEMT layers and devices are presented and a short overview of semi-insulating SiC crystal growth is given.

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Ashok K. Sood, Elwood James Egerton, Yash R. Puri, Frederick W. Clarke Jr., James C.M. Hwang, Amir Dabiran, Peter Chow, Tom Anderson, Avi Gupta, Andy Souzis, and Ilya Zwieback "Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications", Proc. SPIE 5550, Free-Space Laser Communications IV, (20 October 2004); https://doi.org/10.1117/12.561584

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