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22 October 2004 External electric field dependence of nonvolatile holographic recording in doubly doped LiNbO3 crystals
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Abstract
External electric field has great effect on grating formation via additional carrier drift during nonvolatile holographic recording. The photorefractive properties of doubly doped LiNbO3:Fe:Mn crystals are theoretically investigated by jointly solving the two-center material equations with nonzero external electric field and the coupled-wave equations. The external electric field dependence of the refractive-index changes n1, the diffraction efficiency η as well as the photorefractive sensitivity S are studied for oxidized LiNbO3:Fe:Mn crystals. Significant improvement of the photorefractive performance has been revealed by applying external electric fields to oxidized LiNbO3:Fe:Mn. The enhanced material performance under external electric field improves the applicability of doubly doped LN crystals.
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Qianmin Dong, Liren Liu, Dean Liu, Yu Zhou, and Juan Zhang "External electric field dependence of nonvolatile holographic recording in doubly doped LiNbO3 crystals", Proc. SPIE 5560, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X, (22 October 2004); https://doi.org/10.1117/12.557875
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