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22 October 2004 Photodetectors on the base of ZnO thin films
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Abstract
ZnO thin film is the perspective material for using as active layer in solid-state UV photodetectors. Here we present our investigations of photoelectric properties of the developed photosensitive field-effect transistor. Pure and lithium doped ZnO films were produced by vacuum electron-beam deposition method. Field effect was studied in Li doped ZnO films having high resistivity and in heterostructures consisting of three ZnO layers doped by 1, 5 and 10 at% of Li impurity accordingly. The photoelectric characteristics were measured (currents ratio, charge carriers mobility, ampere-watt sensitivity in UV diapason, NEP sensitivity, and photocurrent kinetics). The open and close current ratio was 106 and the field-effect mobility was ~10 cm2/Vsec. We have also studied the low-frequency noises (0.001÷100 kHz) of UV photodetector and suggested the methods of noise suppression. It was found that the dark current noises and photocurrent noises have different mechanisms.
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Natella R. Aghamalyan, Ruben K. Hovsepyan, Armen R. Poghosyan, and Vahe G. Lazaryan "Photodetectors on the base of ZnO thin films", Proc. SPIE 5560, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X, (22 October 2004); https://doi.org/10.1117/12.556790
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