22 October 2004 High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy
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Abstract
We report MOVPE-grown quantum cascade lasers with operating wavelengths between λ~7.5-9.5μm with threshold current densities as low as 2.4kA/cm2 at room temperature. Seven wafers grown for operation at ~9μm show a variation of just 3% in the superlattice periods obtained from X-ray analysis, and laser emission is observed from all wafers with a ~5meV spread of emission energies. Multimode Fabry-Perot and singlemode distributed feedback lasers have been fabricated, operating at λ~7.8μm at room temperature, corresponding with absorption lines in the infrared spectra of methane. In addition, we have produced a strain compensated MOVPE-grown quantum cascade laser operating at λ~4.5μm.
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Luke R. Wilson, Luke R. Wilson, Richard P. Green, Richard P. Green, Andrey B. Krysa, Andrey B. Krysa, John S. Roberts, John S. Roberts, Wing H. Ng, Wing H. Ng, Dmitry G. Revin, Dmitry G. Revin, Christian Pflugl, Christian Pflugl, Werner Schrenk, Werner Schrenk, Gottfried Strasser, Gottfried Strasser, John W. Cockburn, John W. Cockburn, } "High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.558991; https://doi.org/10.1117/12.558991
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