Translator Disclaimer
Paper
22 October 2004 Large-format IRFPA development on silicon
Author Affiliations +
Abstract
High performance large-format Infrared Focal Plane Arrays are required for Third Generation Infrared Imaging technology. HgCdTe IRFPAs exhibit performances to meet this goal. Si-based composite substrates have proven to be the substrate of choice to realize high-resolution HgCdTe arrays. Composite substrate technology offers scalability, and wafer sizes as large as six-inches have been used with excellent compositional uniformity. Current state-of-the-art composite substrates exhibits dislocation density in low to mid 105 cm-2 range. The HgCdTe epitaxial layers on composite substrates, however, show a defect density in the low to mid 106 cm-2. Recent developments in CdSeTe/Si composite wafers show great promise for a better lattice matching to HgCdTe alloy, and it is envisioned that with further improvements in both, materials quality and device architecture, a HgCdTe based scalable technology is within our grasp.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nibir K. Dhar and Meimei Z. Tidrow "Large-format IRFPA development on silicon", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); https://doi.org/10.1117/12.562812
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top