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22 October 2004 Measurement of electron effective mass ratios in Hg1-xCdxTe for 0.20 ⩽ x ⩽ 0.30 between 77K and 296K
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Effective mass ratios, m*, of electrons in near intrinsic and n-type Hg1-xCdxTe for 0.20 ⩽ x ⩽ 0.30 over the temperature range 77 K ⩽ T ⩽ 296 K were measured using Faraday rotation spectroscopy. Effective masses were found to be about twice as large at room temperature as band edge effective mass, m*be, calculations. Measured effective masses diverge further from the theoretical formulations as temperature increases which appears to be due to a thermal excitation effect that is not accounted for in theoretical calculations. These calculations can be corrected using a linear correction factor, m**, where the true effective mass ratio, m* = m** m*be, where m** was found empirically to be m** = 4.52 x 10-3 T + 0.78. Carrier concentrations were measured using Hall or van der Pauw tests. Soldered contacts to high mobility materials like HgCdTe using even the purest indium solder inevitably result in contamination that can add significant numbers of impurity carriers to the material and severely decrease mobility. A simple method of burnishing contacts to the material without heat using indium solder is presented. These cold contacts do not effect the material properties and are very effective in n-type HgCdTe making good physically strong contacts that remain ohmic to at least 10 K. This is a review paper.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. W. Clarke, S. Balevieius, J. K. McDonald, and J. A. Grisham "Measurement of electron effective mass ratios in Hg1-xCdxTe for 0.20 ⩽ x ⩽ 0.30 between 77K and 296K", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004);


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