Very long wavelength (>15 µm) HgCdTe photodiodes by liquid phase epitaxy

Marion B. Reine; Stephen P. Tobin; Peter W. Norton; Paul LoVecchio

doi:10.1117/12.557317

22 October 2004 Very long wavelength (>15 μm) HgCdTe photodiodes by liquid phase epitaxy

Marion B. Reine, Stephen P. Tobin, Peter W. Norton, Paul LoVecchio

Proceedings Volume 5564, Infrared Detector Materials and Devices; (2004) https://doi.org/10.1117/12.557317
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

This paper reviews and assesses back-illuminated P-on-n photovoltaic HgCdTe detector technology, based on two-layer growth by Liquid Phase Epitaxy on CdZnTe substrates, for application at wavelengths beyond 15 μm in a new generation of spaceborne multispectral instruments for remote sensing. We review data that show feasibility of useful cutoff wavelengths as long as 18-19 μm. We recommend that that LPE photovoltaic HgCdTe technology be extended to the 20-25 μm wavelength region for single elements and small arrays for NASA remote-sensing applications.

Citation Download Citation

Marion B. Reine, Stephen P. Tobin, Peter W. Norton, and Paul LoVecchio "Very long wavelength (>15 μm) HgCdTe photodiodes by liquid phase epitaxy", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); https://doi.org/10.1117/12.557317

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