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6 December 2004 Advanced CD control technologies for EB mask writer
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With the rapid progress in the minimization in the device fabrication, it comes to be indispensable to reduce Critical Dimensional (CD) error in the mask production. The electron beam mask lithography system HL-7000M series has been developed, to meet the needs for mass production line below 90 nm node. A novel high-accuracy Proximity Effect Correction (PEC) method of exposure correction for pattern density variation is applied in this system. By using this high accuracy PEC method, CD error caused by proximity effects has been reduced to 4 nm, from 14 nm with the conventional PEC method.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hajime Kawano, Yasuhiro Kadowaki, Kazui Mizuno, and Hiroyuki Ito "Advanced CD control technologies for EB mask writer", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004);

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