6 December 2004 Characterization of 193-nm resists for optical mask manufacturing
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The push for smaller linewidths and tighter critical dimension (CD) budgets forced manufacturers of optical pattern generators to move from traditional i-line to deep ultraviolet (DUV) resist processing. Entering the DUV area was not without pain. The process conditions, especially exposure times of a few hours, put very tough demands on the resist material itself. However, today 248nm laser writers are fully operating using a resist process that exhibits the requested resolution, CD uniformity and environmental stability. The continuous demands of CD performance made Micronic to investigate suitable resist candidate materials for the next generation optical writer using 193nm excimer laser exposure. This paper reports on resist benchmarking of one commercial as well as several newly developed resists. The resists were investigated using a wafer scanner. The data obtained illustrate the current performance of 193nm photoresists, and further demonstrate that despite good progress in resist formulation optimization, the status is still a bit from the required lithographic performance.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Fosshaug, Hans Fosshaug, Adisa Paulsson, Adisa Paulsson, Uldis Berzinsh, Uldis Berzinsh, Helena Magnusson, Helena Magnusson, } "Characterization of 193-nm resists for optical mask manufacturing", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.570097; https://doi.org/10.1117/12.570097

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