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6 December 2004 Comparative study of mask architectures for EUV lithography
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Three different architectures were compared as candidates for EUV lithography masks. Binary masks were fabricated using two different stacks of absorber materials and using a selective etching process to directly pattern the multilayer of the mask blank. To compare the effects of mask architecture on resist patterning, all three masks were used to print features into photoresist on the EUV micro-exposure tool (MET) at Lawrence Berkeley National Laboratory. Process windows, depth of focus, mask contrast at EUV, and horizontal and vertical line width bias were use as metrics to compare mask architecture. From printing experiments, a mask architecture using a tantalum nitride absorber stack exhibited the greatest depth of focus and process window of the three masks. Experimental results obtained using prototype masks are discussed in relation to simulations. After accounting for CD biasing on the masks, similar performance was found for all three mask architectures.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam Richard Pawloski, Bruno La Fontaine, Harry J. Levinson, Stefan Hirscher, Siegfried Schwarzl, Klaus Lowack, Frank-Michael Kamm, Markus Bender, Wolf-Dieter Domke, Christian Holfeld, Uwe Dersch, Patrick Naulleau, Florian Letzkus, and Joerg Butschke "Comparative study of mask architectures for EUV lithography", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004);


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