6 December 2004 E-beam lithography experimental results and simulation for the 45-nm node
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E-Beam Lithography is still the driving technology for semiconductor manufacturing of critical levels at the 45nm node. Mask costs, yields and representation of the mask on wafer are important factors to consider. Mask-less E-beam lithography is being considered, but major manufacturing is still done by scanner technology. Therefore the same emphasis on modeling applied in the 1990's on the wafer is now being applied to mask technologies to drive down costs, improve yields and to develop viable mask to wafer transfer patterns. Yield is ultimately connected to process latitude, which is limited by a variety of electron-material interaction issues. As in the optical world, the question is how to maximize the process window considering all the systematic and statistical error sources. Simulation can be used to find out the magnitude of yield limiting effects, and to evaluate the contributing error sources such as PEC file contributions. Film stacks are now becoming an important contributor to statistical error due to technologies such as tri-tone attenuated masks that place a thin layer of chrome over MoSi. In this paper we will compare the SELID E-beam simulation to cross-sections of line-space and contact patterns. Demonstrations of simulation to real data and the use of simulation to further evaluate process window to enhance the learning mode during development cycles will be presented.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John Nistler, John Nistler, Chia-Jen Chen, Chia-Jen Chen, Sergey Vychub, Sergey Vychub, Hsin-Chang Lee, Hsin-Chang Lee, Lee-Chih Yeh, Lee-Chih Yeh, Hung-Chang Hsieh, Hung-Chang Hsieh, Christoph Sambale, Christoph Sambale, Ulrich Hofmann, Ulrich Hofmann, } "E-beam lithography experimental results and simulation for the 45-nm node", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.570022; https://doi.org/10.1117/12.570022

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