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6 December 2004 EUVL mask patterning with blanks from commercial suppliers
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Extreme Ultraviolet Lithography (EUVL) reflective mask blank development includes low thermal expansion material fabrication, mask substrate finishing, reflective multi-layer (ML) and capping layer deposition, buffer (optional)/absorber stack deposition, EUV specific metrology, and ML defect inspection. In the past, we have obtained blanks deposited with various layer stacks from several vendors. Some of them are not commercial suppliers. As a result, the blank and patterned mask qualities are difficult to maintain and improve. In this paper we will present the evaluation results of the EUVL mask pattering processes with the complete EUVL mask blanks supplied by the commercial blank supplier. The EUVL mask blanks used in this study consist of either quartz or ULE substrates which is a type of low thermal expansion material (LTEM), 40 pairs of molybdenum/silicon (Mo/Si) ML layer, thin ruthenium (Ru) capping layer, tantalum boron nitride (TaBN) absorber, and chrome (Cr) backside coating. No buffer layer is used. Our study includes the EUVL mask blank characterization, patterned EUVL mask characterization, and the final patterned EUVL mask flatness evaluation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pei-Yang Yan, Guojing Zhang, Rajesh Nagpal, Emily Y. Shu, Chaoyang Li, Ping Qu, and Frederick T. Chen "EUVL mask patterning with blanks from commercial suppliers", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004);


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