6 December 2004 Full-chip-model-based correction of flare-induced linewidth variation
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Abstract
Scattered light in optical lithography, also known as flare, has been shown to cause potentially significant linewidth variation at low-k1 values. The interaction radius of this effect can extend essentially from zero to the full range of a product die and beyond. Because of this large interaction radius the correction of the effect can be very computation-intensive. In this paper, we will present the results of our work to characterize the flare effect for 65nm and 90nm poly processes, model that flare effect as a summation of gaussian convolution kernels, and correct it within a hierarchical model based OPC engine. Novel methods for model based correction of the flare effect, which preserve much of the design hierarchy, is discussed. The same technique has demonstrated the ability to correct for long-range loading effects encountered during the manufacture of reticles.
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James Word, James Word, Jerome Belledent, Jerome Belledent, Yorick Trouiller, Yorick Trouiller, Wilhelm Maurer, Wilhelm Maurer, Yuri Granik, Yuri Granik, Emile Sahouria, Emile Sahouria, Olivier Toublan, Olivier Toublan, } "Full-chip-model-based correction of flare-induced linewidth variation", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569175; https://doi.org/10.1117/12.569175
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