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6 December 2004 MEEF-based mask inspection
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Abstract
Mask making yield is seriously affected by un-repairable mask defects. Up to now, there is only one size specification for critical defects, which has to be applied to any defect found. Since recently, some mask inspection tools offer the capability to inspect different features on one mask with different sensitivity. Boolean operations can be used to segregate mask features into more and less critical. In this paper we show the MEEF (Mask Error Enhancement Factor), which determines from the mask / wafer pattern transfer the actual effectiveness of mask errors, as an objective and relatively easily determinable parameter to assess the printability of mask defects. Performing OPC, a model-based OPC tool is aware of the MEEF, and can also provide the capability for the additional information handling, which is needed to supply the mask maker with a set of data layers of different defect printability for one mask layer.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wilhelm Maurer, James Word, Steffen F. Schulze, and Shumay Dou Shang "MEEF-based mask inspection", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569330
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