Paper
6 December 2004 Maintaining lithographic quality during OPC for low k1 and MEEF processes constrained by mask dimensional rules
Author Affiliations +
Abstract
Mask fabrication rules can interfere with the ability of OPC and RET shape generation to achieve the best lithographic quality on silicon. With low k1 lithography, ideal correction shapes dictated by lithography-based simulation frequently violate mask geometry constraints. Because the scaled spatial bandwidth of the wafer lithography process is lower than that of the mask process there are some degrees of freedom in OPC shape generation to optimize for lithographic accuracy and mask compliance together. In this paper we discuss strategies to embed mask rule compliance in correct-by-construction model-based OPC.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher M. Cork, Lawrence S. Melvin III, Michael Miller, Robert M. Lugg, and Michael L. Rieger "Maintaining lithographic quality during OPC for low k1 and MEEF processes constrained by mask dimensional rules", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.568550
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KEYWORDS
Optical proximity correction

Photomasks

Lithography

Image segmentation

Silicon

Model-based design

Mask making

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