6 December 2004 Next-generation DUV ALTA mask patterning capabilities
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Abstract
The capability of the DUV ALTAÒ 4300 system has been extended by the development of two new optical subsystems: a 0.9 NA, 42X reduction lens and a high-bandwidth acousto-optic deflector based beam position and intensity correction servo. The PSM overlay performance has been improved by modifications to the software algorithms. Characterization data show improved resolution performance in line end shortening, through pitch CD bias and feature corner acuity. The AOD subsystem reduces stripe beam placement errors and random and systematic beam intensity errors. This has enabled local CD uniformity to be reduced to 4.3 nm (3σ) and global CD uniformity to be reduced to 5.8 nm (range/2). Second layer overlay performance is now 20 nm (max error). A split lot wafer evaluation has demonstrated the equivalence of unmodified ALTAÒ 4300 reticles to those printed on a 50 KeV electron beam system for a 130/110 nm device. Wafer lithography results show equivalent CD uniformity, depth of focus and pattern registration results.
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Paul C. Allen, Michael J. Bohan, Eric R. Christenson, H. Christopher Hamaker, Sam C. Howells, Boaz Kenan, Peter Pirogovsky, Malik K. Sadiq, Robin L. Teitzel, Michael C. White, Michael Ungureit, Alan Wickstrom, Robert Kiefer, Curt Jackson, "Next-generation DUV ALTA mask patterning capabilities", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.570291; https://doi.org/10.1117/12.570291
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