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6 December 2004 OPC model calibration for CPL patterning at extreme low k1
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Abstract
Model based optical proximity correction (OPC) to enhance image fidelity and process robustness has become one of the most critical components that enable the low k1 optical lithography. To meet the challenges imposed by the previously unthinkable low k1 for manufacturing with most stringent dimension control requirements, a capable OPC model to meet such an aggressive lithography challenges has been urgently called upon. In addition to providing better accuracy for the currently implemented process technologies, the new OPC model must work well with Chromeless Phase Lithography (CPL) in which the topography on the mask is rather significant, and Double Dipole Lithography (DDL) in which two masks and two exposures are needed. It must also be able to intelligently take into account the effect from the more aggressive illuminations, usch as customer designed illuminator and experimental measured illuminator profile from the scanners. The physical and mathematical foundation of the model must be well thought of to meet the requirements for the above-mentioned applications. We have extended our Eigen Decomposition Model (EDM) for model OPC treatment into the high NA regime, in which the vector characteristics of light and thin film stack are taken into account. For CPL calibration, it has been found that 3D mask topography effect cannot be ignored in order to achieve satisfactory model accuracy.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuelong Shi, Tom Laidig, J. Fung Chen, Douglas Van Den Broeke, Stephen Hsu, Michael Hsu, Kurt E. Wampler, Uwe Hollerbach, Jung Chul Park, and Linda Yu "OPC model calibration for CPL patterning at extreme low k1", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569655
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