Translator Disclaimer
6 December 2004 PMJ (Photomask Japan) 2004 panel overview: Issues on mask technology for 65-nm lithography with ArF
Author Affiliations +
Abstract
At the panel discussion of Photomask Japan 2004, we discussed about "Issues on mask technology for 65nm lithography with ArF". The summary of the PMJ2004 panel discussion is as follows: (1) 65nm node will be achieved with ArF immersion/dry lithography, (2) Attenuated PSM, Alternative PSM and Gate-Shrink will be used for 65nm device production., (3) there are no red brick walls for 65nm mask making, though there are many issues to be solved for 65nm mask fabrication; CD control, inspection, writer, repair, metrology and mask cost. The message from the panel discussion of PMJ2004 is "The mask technology will be ready for 65nm device development and production at 2007" For the business success, chip makers, mask manufacturers, EDA tool and equipment suppliers should work together in order to reduce the mask cost and cycle time.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hisashi Watanabe and Hidehiro Watanabe "PMJ (Photomask Japan) 2004 panel overview: Issues on mask technology for 65-nm lithography with ArF", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.580023
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top