6 December 2004 Printability evaluation for 800-nm contact hole with repaired patterns according to exposing condition
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Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004); doi: 10.1117/12.569387
Event: Photomask Technology, 2004, Monterey, California, United States
Abstract
We investigated the defect printability of KrF attenuated PSM. To analyze the printability of PSM defects, the programmed defect mask was designed and fabricated. The programmed defect mask contains background pattern layer of 800nm contact holes. Various types and sizes of MoSi defects such as extensions, dots and holes were programmed on the background patterns. We used a KrF excimer step-and-scan exposure system for wafer printing test. Based on the experimental results, we defined the maximum non-printable defects size of MoSi defects and tested repair performance of current tools by comparing the printability of defect pattern between pre-repair and post-repair. In addition, we calculated CD of defected patterns by simulation and compared it with the print CD.
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Sang Pyo Kim, Sang Chul Kim, Hee Chun Kim, Sang Lee Lee, Yong Kyoo Choi, Oscar Han, "Printability evaluation for 800-nm contact hole with repaired patterns according to exposing condition", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569387; https://doi.org/10.1117/12.569387
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KEYWORDS
Photomasks

Scanning electron microscopy

Semiconducting wafers

Carbon

Photoresist processing

Printing

Optical lithography

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