6 December 2004 Proposal of using EUVL for PXL
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Abstract
A new idea of writing a PXL (Proximity X-ray Lithography) mask is presented, in which a EUVL (extreme ultraviolet lithography) exposure tool is used as a mask repeater. EUV power of less than 1W is enough to write a PXL mask within 5 minutes, and an expensive EUV mask blank can be recycled because the mother mask is not necessary once a PXL mask is written. A EUV mask repeater especially consisting of a high-NA Micro Exposure Tool (MET) makes it possible to write a PXL mask for the 32 nm nodes and after. The new system can also be applied to other lithography tools using a 1X: such as LEEPL (Low Energy E-Beam Proximity Lithography) and imprint lithography.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiwamu Takehisa, Kiwamu Takehisa, "Proposal of using EUVL for PXL", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569651; https://doi.org/10.1117/12.569651
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