Increase of cost and long turn-around-time (TAT) are becoming hot topics for advanced photomasks. Especially, in the small volume production such as SoC and pilot production, the mask cost and TAT are becoming an important issue for the semiconductor industry. To get rid of these issues, we propose the R-mask (resist shade mask) concept, and in this paper, we will focus on the fabrication techniques of the R-mask. The essential of the R-mask is the simplification of mask fabrication and inspection process. A newly developed e-beam resist, which is able to shield the KrF light, is used as the mask pattern material instead of the chrome. Pellicle is mounted immediately after the mature development process, so that defect density could be reduced. Furthermore, the R-mask concept omits mask cleaning and repair process. We evaluated the newly developed e-beam resist from the standpoint of applicability to mask manufacturing, and we successfully made an R-mask for 180nm metal layer pattern with the new resist. In this paper the process performance of resist is reported.