6 December 2004 Resist model calibration using 2D developed patterns for low-k1 process optimization and wafer printing predictions
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Abstract
We describe a new resist model calibration procedure and its implementation in LithoCruiserTM. In addition to the resist calibration, LithoCruiser is used to perform simultaneous optimization for numerical aperture (NA), mask OPC, and illumination profile with built-in manufacturing constraints for ASML illumination diffractive optical elements (DOE). This calibration procedure uses a global optimization algorithm for resist parameter tuning, matching the simulated and measured 2D resist contours at a user-defined multiple CD sampling across the selected developed 2D resist patterns. Using lumped parameter type resist models and vector high-NA simulation engine, this resist calibration procedure showed an excellent calibration capability of max CD error range < ±4nm for the CPL 70nm DRAM patterns. Calibration results for CPL 130nm contact hole patterns are also included in this manuscript. Dependency of the calibrated model parameters on lithography process (i.e., Quasar, C-Quad illumination and at different defocus) and further improvements to a more predictable resist model are discussed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ting Chen, Ting Chen, Douglas Van Den Broeke, Douglas Van Den Broeke, Sean Park, Sean Park, Armin Liebchen, Armin Liebchen, J. Fung Chen, J. Fung Chen, Stephen Hsu, Stephen Hsu, Jung Chul Park, Jung Chul Park, Linda Yu, Linda Yu, Keith Gronlund, Keith Gronlund, } "Resist model calibration using 2D developed patterns for low-k1 process optimization and wafer printing predictions", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.568671; https://doi.org/10.1117/12.568671
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