6 December 2004 Sensitivity of the 65-nm poly line printability to sPSM manufacturing errors
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Abstract
A methodology and a Monte Carlo simulation flow with integrated LSI Logic's OPC package, Molotof, was applied to the 65nm poly line sensitivity analysis. Strong phase shift mask (sPSM) manufacturing specifications were optimized to obtain image critical dimensions (CD) and image placement errors (IPE) complying with technology design rules. Reticle manufacturing statistical errors of phase depth, phase width, and phase intensity imbalance were used to generate a virtual sPSM for imaging poly lines. A criterion for qualifying reticle specification is to obtain all latent image CDs and IPEs within a design rule allowed range for a given mask specification. The approach allows for computing reticle and litho budgets into CD imaging performance. We present simulation and empirical results of statistical analysis of the 65nm poly line (clear field) printability, and a method for optimizing a strong phase shift reticle specification. Sensitivity to a single parameter variation and full statistical analysis of the 65nm poly line imaging performance affected by manufacturing errors is presented. The optimum reticle specification, yielded 100% of critical dimensions and image placement errors, was found in simulation and confirmed by empirical data.
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Nadya Belova, Nadya Belova, John V. Jensen, John V. Jensen, Ebo H. Croffie, Ebo H. Croffie, Neal P. Callan, Neal P. Callan, } "Sensitivity of the 65-nm poly line printability to sPSM manufacturing errors", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.570283; https://doi.org/10.1117/12.570283
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