Paper
6 December 2004 Software to simulate dry etch in photomask fabrication
Sergey Babin, Konstantin Bay, Sergey Okulovsky
Author Affiliations +
Abstract
Dry etch in maskmaking is one of the major contributors to variation of critical dimensions (CD) which is caused primarily by the microloading and macroloading effects. CD variation during etch depends on the type of pattern involved. It would be highly desirable to run a pattern through the software to predict CD variation due to dry etch and decide if the variation is within the prescribed tolerance or if the pattern needs additional correction, and to what degree. In this paper, a dry etch simulation tool TRAVIT is introduced that is capable of simulating etch profile, CD, and CD errors. Using a set of desired process conditions, the software runs the simulation for the pattern of interest that helps to optimize sidewall, bias, and CD variation. Incorporating simulation into the maskmaking process can save cost and shorten the time to production.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Babin, Konstantin Bay, and Sergey Okulovsky "Software to simulate dry etch in photomask fabrication", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.575426
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Etching

Critical dimension metrology

Dry etching

Isotropic etching

Photomasks

Device simulation

Software development

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