The influence of an electrostatic pin chuck on EUV mask flatness

Gerald A. Dicks; Andrew R. Mikkelson; Roxann L. Engelstad

doi:10.1117/12.569034

6 December 2004 The influence of an electrostatic pin chuck on EUV mask flatness

Gerald A. Dicks, Andrew R. Mikkelson, Roxann L. Engelstad

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.569034
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

The development of a low-distortion mask is of prime importance to Extreme Ultraviolet (EUV) Lithography. The mask consists of a standard ultra low expansion (ULE®) substrate measuring 152.4 mm x 152.4 mm x 6.35 mm, with a 280 nm thick reflective multilayer deposited on the top surface. Nonflatness of the mask patterned surface will manifest itself as image placement errors on the device wafer. Bottom surface nonflatness can interfere with securely holding the mask in the patterning and exposure tools as well as exacerbating patterned surface nonflatness. Of great concern is the effect of the mounting technique employed in the patterning and exposure tools on mask flatness. One such design, the electrostatic pin chuck, consists of a 'bed of pins' on the top surface of the chuck that will support the EUV mask during patterning and exposure. The pin design has been proposed to minimize the likelihood of particulates becoming lodged between the mask and chuck that would adversely distort the mask. To ensure that a chuck of this design will minimize image placement errors while still securely holding the mask, three-dimensional finite element (FE) models have been created to predict the influence of the electrostatic pin chuck on mask flatness. Legendre polynomials were used as input to the models to represent experimentally-measured substrate bottom surface shapes. The FE results illustrate that mechanical modeling provides an invaluable tool for quantifying the influence of mounting techniques on mask flatness, and, ultimately optimizing system parameters to successfully meet the stringent requirements at the 45-nm node (and below).

Citation Download Citation

Gerald A. Dicks, Andrew R. Mikkelson, and Roxann L. Engelstad "The influence of an electrostatic pin chuck on EUV mask flatness", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569034

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