6 December 2004 Writing strategy and electron-beam system with an arbitrarily shaped beam
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The greatly increased complexity of modern masks has in turn led to increased write times and cost of the masks. Any opportunity to decrease write time while providing the required accuracy of the fabricated pattern is highly beneficial. A writing strategy using an arbitrarily shaped beam (ASB) results in a considerably smaller number of flashes to write a complex pattern compared to other strategies. The design of an ASB system is proposed. The ASB electron-beam column is similar to that of a variable-shaped beam system, except for a modified beam-shaping block. This suggests the relatively easy integration of an ASB column. The throughput of an ASB system is a few times greater than the throughput of other systems, except for patterns with low coverage or simple geometries. In addition to the throughput advantages, an ASB system enables higher accuracy, including the feasibility of writing features according to "ideal" optical proximity correction.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Babin, Sergey Babin, } "Writing strategy and electron-beam system with an arbitrarily shaped beam", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.568677; https://doi.org/10.1117/12.568677


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