20 December 2004 CMOS-compatible polysilicon MSM photodetector for 1550-nm light
Author Affiliations +
Interdigitated metal-semiconductor-metal (MSM) photodetectors operating at 1550 nm were fabricated by depositing metal contacts on top of polycrystalline silicon (polysilicon), which was deposited by a variety of techniques. The highest responsivity was 0.66 mA/W, corresponding to an external quantum efficiency of 0.16%, obtained from a 2 μm thick polysilicon sample. Using Raman spectroscopy, it was found that polysilicon with grain sizes between 6 nm and 13 nm provides the best photoresponse at 1550nm.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yumei Liu, Yumei Liu, N. Garry Tarr, N. Garry Tarr, Andrew P. Knights, Andrew P. Knights, } "CMOS-compatible polysilicon MSM photodetector for 1550-nm light", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); doi: 10.1117/12.567094; https://doi.org/10.1117/12.567094

Back to Top