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20 December 2004 Design and analysis of wide-band InGaAlAs/InP superluminescent light-emitting diodes
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Abstract
We use a quasi-three-dimensional numerical model combining finite element calculations in the x - y plane and a longitudinal optical model for the design and the simulation of wide band superluminescent InGaAlAs/InP light emitting diodes (SLEDs). It is shown that by using an active region with a continuously varying composition, bulk devices can provide singlelobe spectra of more than 100 nm full-width-at-half-maximum (FWHM) and output powers of a few tens of mW. This is broader than multiple quantum-well (MQW) device singlelobe spectra which do not exceed ~70 nm FWHM in the same power range.
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Alain Champagne, Michel Lestrade, and Romain Maciejko "Design and analysis of wide-band InGaAlAs/InP superluminescent light-emitting diodes", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); https://doi.org/10.1117/12.567345
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