Paper
20 December 2004 Measurement-based model for MQW electroabsorption modulators
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Abstract
A model for a multiple quantum well electroabsorption modulator is developed based on measurements of the escape time of photogenerated carriers, the dependence of the fiber-to-fiber loss on the applied voltage, the dependence of the α-parameter of the modulated signal on the applied voltage, and the intensity modulation frequency response. The accuracy and computational efficiency of the model in describing the intensity and phase modulation properties of optical signal make it suitable for computer simulations aimed at system design and performance evaluation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ning Cheng and John C. Cartledge "Measurement-based model for MQW electroabsorption modulators", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); https://doi.org/10.1117/12.567259
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KEYWORDS
Modulation

Modulators

Picosecond phenomena

Phase shift keying

Computer simulations

Optical components

Performance modeling

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