20 December 2004 Terahertz emission from surface optical rectification in n-InAs
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Abstract
Terahertz emission from n-type (100), (110) and (111) InAs crystals have been measured as a function of the sample orientation. Emission was excited using 120 fs Ti:Sapphire laser pulses at an incident angle of 45° with fluences of approximately 1-2mJ/cm2. The data is shown to match the behavior expected for optical rectification at the surface, with small contributions from bulk optical rectification and photo-carrier diffusion. Thus, at fluences employed in the present study, it appears that the dominant mechanism for generating THz radiation is optical rectification at the surface.
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M. Reid, R. Fedosejevs, "Terahertz emission from surface optical rectification in n-InAs", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); doi: 10.1117/12.567332; https://doi.org/10.1117/12.567332
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