21 October 2004 Facet oxidation and degradation of AlGaAs/GaAs pulsed laser diodes
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Proceedings Volume 5581, ROMOPTO 2003: Seventh Conference on Optics; (2004) https://doi.org/10.1117/12.582822
Event: ROMOPTO 2003: Seventh Conference on Optics, 2003, Constanta, Romania
Abstract
Oxide films grow in atmosphere as a result of oxidation reaction and mass transport of the element through the oxide film. In most III-V compounds (as GaAs) semiconductor oxides of III-element and V-element are formed individually. The AlGaAs/GaAs laser diodes were exposed to facet oxidation at mirror surfaces in normal environmental conditions for a storage process. It was observed a decrease of optical output power in the early stage of experiment together with a constancy of the ratio P/P(O) for the long time term (month). We suggest the development at the mirror laser facet of a natural oxide film as Ga2O3 and GaAsO. We present a SEM (Scanning Electron Microscopy) image of a natural oxide film grown in atmosphere at the surface of AlGaAs as laser facet, as well as a picture of a facet oxidation of a laser device. The EDS (Electron Dispersion Spectrum) of a natural oxide put into evidence the O (Kα) signal. Dielectric coating using Al2O3 and a-Si layers protected a part of laser devices, and at the mirror surface a reflectivity of 70% in the emission range of the laser (890 nm) was measured. The emitted power for dielectric coated devices was constant, so the rapid degradation process was slowed down.
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Rodica V. Ghita, Mihail F. Lazarescu, A. Stefan Manea, C. Logofatu, Eugen Vasile, Victor Ciupina, "Facet oxidation and degradation of AlGaAs/GaAs pulsed laser diodes", Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); doi: 10.1117/12.582822; https://doi.org/10.1117/12.582822
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