21 October 2004 Laser cleaning of the metallic thin films from silicon wafer surface with UV laser radiation
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Proceedings Volume 5581, ROMOPTO 2003: Seventh Conference on Optics; (2004) https://doi.org/10.1117/12.582938
Event: ROMOPTO 2003: Seventh Conference on Optics, 2003, Constanta, Romania
Abstract
The interest to use laser surface processing in microtechnology as a friendly method from the technologic and environmental point of view lead our studies about laser radiation interaction with photo-resist and metallic thin films. In this view we have tried in our experiments to process metallic thin films deposited on silicon substrate by using laser radiation. To obtain a good quality of the metallic thin film removal from the silicon surface a careful selection of the incident laser intensity, number of pulses and irradiation geometry is needed. The threshold value for the laser cleaning intensity depends on the number of incident laser pulses. A careful experimental estimation of the cleaning conditions from the point of view of incident laser energy, fluence, intensity and irradiation geometry was realized for aluminum, copper, and chromium thin films.
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Ileana Apostol, Dan Apostol, Damian Victor, Adrian Timcu, Iuliana Iordache, Marie-Claude C. Castex, Roberta Galli, Dumitru Gh. Ulieru, "Laser cleaning of the metallic thin films from silicon wafer surface with UV laser radiation", Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); doi: 10.1117/12.582938; https://doi.org/10.1117/12.582938
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