The effect of deposition parameters on the boron nitride films grown on Si(100) by PLD with nanosecond pulses

C. R. Luculescu; Shunichi Sato; Constantin G. Fenic

doi:10.1117/12.582922

21 October 2004 The effect of deposition parameters on the boron nitride films grown on Si(100) by PLD with nanosecond pulses

C. R. Luculescu, Shunichi Sato, Constantin G. Fenic

Author Affiliations +

Proceedings Volume 5581, ROMOPTO 2003: Seventh Conference on Optics; (2004) https://doi.org/10.1117/12.582922
Event: ROMOPTO 2003: Seventh Conference on Optics, 2003, Constanta, Romania

Abstract

The effects of several deposition parameters on the quality of deposited boron nitride (BN) films by pulsed laser deposition (PLD) with short laser pulses are studied. The laser fluence, nitrogen background pressure, Si(100) substrate temperature and laser wavelength were varied in order to find the maximum content of the cubic phase in our BN films. We found that laser fluence and wavelength are affecting strongly the structure of BN films while background pressure and substrate temperature are affecting slightly the film morphology.

Citation Download Citation

C. R. Luculescu, Shunichi Sato, and Constantin G. Fenic "The effect of deposition parameters on the boron nitride films grown on Si(100) by PLD with nanosecond pulses", Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); https://doi.org/10.1117/12.582922

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