24 September 2004 A survey of new laser and detector structures for 3-5 μm midinfrared spectral range
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Proceedings Volume 5582, Advanced Optoelectronics and Lasers; (2004); doi: 10.1117/12.583464
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
The paper presents an overview of semiconductor laser and detector structures for the Mid-Infrared wavelength range (3 - 5 μm). Recent progresses in new laser systems are described: intersubband InAs/AlSb quantum cascade lasers (QCLs), interband type-II "W" lasers, and interband quantum cascade lasers (ICLs). All these laser structures employing AlSb, InAs, GaSb and related alloys have the potentiality to reach the challenge of room temperature operation in continuous wave for modern applications. The description of detector structures is focused on interband transition systems based on bulk InAs0.9Sb0.1, type-III InAs/GaSb superlattices or InSb/GaSb quantum dots.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre Francis Joullie, Philippe Christol, Jean Baptiste Rodriguez, Hocine Ait-Kaci, France Chevrier, Jose Nieto, Francisco De Anda, "A survey of new laser and detector structures for 3-5 μm midinfrared spectral range", Proc. SPIE 5582, Advanced Optoelectronics and Lasers, (24 September 2004); doi: 10.1117/12.583464; https://doi.org/10.1117/12.583464

Quantum cascade lasers

Indium arsenide

Quantum wells


Semiconductor lasers

Gallium antimonide


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