24 September 2004 Semiconductor lasers on type-I and II heterostructures: numerical analysis and threshold characteristics
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Proceedings Volume 5582, Advanced Optoelectronics and Lasers; (2004) https://doi.org/10.1117/12.583391
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
The aim of this work is to illustrate features of computation for MQW strained semiconductor lasers based on type-I and II heterostructures. The theoretical results founded on the given distinctions allowed to investigate the threshold current temperature dependence and research the behavior of all its components for InGaAsSb/AlGaAsSb and InGaAsSb/GaSb heterolasers which we have chosen as examples of type-I and II heterostructures respectively. The obtained data and additionally carried out computations assure that further threshold current optimization will result in its lowering.
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Igor A. Sukhoivanov, Igor A. Sukhoivanov, Olga V. Mashoshyna, Olga V. Mashoshyna, } "Semiconductor lasers on type-I and II heterostructures: numerical analysis and threshold characteristics", Proc. SPIE 5582, Advanced Optoelectronics and Lasers, (24 September 2004); doi: 10.1117/12.583391; https://doi.org/10.1117/12.583391
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