Recent development activities and future plans for EUV lithography in Japan

Shinji Okazaki

doi:10.1117/12.570969

19 January 2005 Recent development activities and future plans for EUV lithography in Japan

Shinji Okazaki

Proceedings Volume 5592, Nanofabrication: Technologies, Devices, and Applications; (2005) https://doi.org/10.1117/12.570969
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States

Abstract

EUV lithography is one of the most promising technologies for the delineation of 45-nm half-pitch patterns (hp 45 on the ITRS Roadmap) and below. However, many problems remain to be solved before it can be considered a practical tool. The light source is the most critical issue for obtaining a reasonable throughput, and the next is the fabrication of defect-free multilayer mask blanks. The construction of an aspherical optical system is also a key issue. From an economic standpoint, cost is a crucial concern regarding use of this technology in an industrial environment. In Japan, four consortia are working on the development of EUV lithography: EUVA is investigating the source and the system, including the metrology of an aspherical optical system; the Leading Project is working on the basic technology for a laser-produced plasma source; ASET is developing multilayer masks and resist process technology; and MIRAI is researching actinic defect detection for multilayer mask blanks. This paper describes the recent activities of these consortia and the future plans for EUVL development in Japan.

Citation Download Citation

Shinji Okazaki "Recent development activities and future plans for EUV lithography in Japan", Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, (19 January 2005); https://doi.org/10.1117/12.570969

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