Self-assembled monolayer modifications of organic thin film transistors

Ivan Shuvalov; Rhys Lawson; Hong Ma; Alex K.-Y. Jen; Larry Raymond Dalton

doi:10.1117/12.569304

19 January 2005 Self-assembled monolayer modifications of organic thin film transistors

Ivan Shuvalov, Rhys Lawson, Hong Ma, Alex K.-Y. Jen, Larry Raymond Dalton

Proceedings Volume 5592, Nanofabrication: Technologies, Devices, and Applications; (2005) https://doi.org/10.1117/12.569304
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States

Abstract

Future generations of flexible, transparent electronics will require the use of polymer based thin-film transistors (TFTs) exhibiting high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. We investigate the nanoscale, self-assembled monolayer (SAM) influence on organic-based thin film transistors (OTFT) at the interface between semiconducting polymer and both the source/drain metal contacts and the insulator. Capacitance-voltage (C-V) characteristics help to elucidate the role of SAMs in the OTFT structure and the charge injection mechanism. Positive trends and parasitic effects are also addressed in characterization.

Citation Download Citation

Ivan Shuvalov, Rhys Lawson, Hong Ma, Alex K.-Y. Jen, and Larry Raymond Dalton "Self-assembled monolayer modifications of organic thin film transistors", Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, (19 January 2005); https://doi.org/10.1117/12.569304

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