19 January 2005 Self-assembled monolayer modifications of organic thin film transistors
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Proceedings Volume 5592, Nanofabrication: Technologies, Devices, and Applications; (2005) https://doi.org/10.1117/12.569304
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Abstract
Future generations of flexible, transparent electronics will require the use of polymer based thin-film transistors (TFTs) exhibiting high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. We investigate the nanoscale, self-assembled monolayer (SAM) influence on organic-based thin film transistors (OTFT) at the interface between semiconducting polymer and both the source/drain metal contacts and the insulator. Capacitance-voltage (C-V) characteristics help to elucidate the role of SAMs in the OTFT structure and the charge injection mechanism. Positive trends and parasitic effects are also addressed in characterization.
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Ivan Shuvalov, Ivan Shuvalov, Rhys Lawson, Rhys Lawson, Hong Ma, Hong Ma, Alex K.-Y. Jen, Alex K.-Y. Jen, Larry Raymond Dalton, Larry Raymond Dalton, } "Self-assembled monolayer modifications of organic thin film transistors", Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, (19 January 2005); doi: 10.1117/12.569304; https://doi.org/10.1117/12.569304
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