Carbon nanotube devices for GHz to THz applications

Peter J. Burke

doi:10.1117/12.568159

Translator Disclaimer

29 December 2004 Carbon nanotube devices for GHz to THz applications

Proceedings Volume 5593, Nanosensing: Materials and Devices; (2004) https://doi.org/10.1117/12.568159
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States

Abstract

The study of the ac properties of nano-electronic systems is still in its infancy. In this paper we present an overview of recent work aimed at advancing the understanding of this new field. Specifically, we first discuss the passive RF circuit models of one-dimensional nanostructures as interconnects. Next, we discuss circuit models of the ac performance of active 1d transistor structures, leading to the prediction that THz cutoff frequencies should be possible. We recently demonstrated the operation of nanotube transistors at 2.6 GHz. Third, we discuss the radiation properties of 1d wires, which could form antennas linking the nanoworld to the macroworld. This could completely remove the requirements for lithographically defined contacts to nanotube and nanowire devices, one of the greatest unsolved problems in nanotechnology.

Citation Download Citation

Peter J. Burke "Carbon nanotube devices for GHz to THz applications", Proc. SPIE 5593, Nanosensing: Materials and Devices, (29 December 2004); https://doi.org/10.1117/12.568159

ACCESS THE FULL ARTICLE