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29 December 2004 Localization and shot noise in nanostructures
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Proceedings Volume 5593, Nanosensing: Materials and Devices; (2004) https://doi.org/10.1117/12.581346
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Abstract
Nano-structures are increasingly finding more applications in modern electronic/photonic devices. However, an accurate prediction of the nano-device performance is complicated by carrier localization and, in certain applications, the presence of an applied magnetic field. Shot noise measurements are suggested as a means to quantify localization. An alternative technique using tunneling time to characterize localization in nano-structures in the presence of random elastic and inelastic scattering is presented. The treatment is extended to include the effect of magnetic fields. The calculations are carried out self-consistently by solving Schroedinger and Poisson's equations for the accurate determination of the developed space charge.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. F. Mehdi Anwar "Localization and shot noise in nanostructures", Proc. SPIE 5593, Nanosensing: Materials and Devices, (29 December 2004); https://doi.org/10.1117/12.581346
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