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29 December 2004 Low-dimensional [110]-orientated lead chalcogenides for mid-infrared lasers
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Proceedings Volume 5593, Nanosensing: Materials and Devices; (2004)
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Low dimensional lead salt structure such as quantum-well (QW) structure is proposed for the fabrication of opto-electronic devices. Among [100], [111], and [110] orientations, [110]-orientated QW structure offers the highest gain. Theoretical simulations of [110] QW Pb-salt edge-emitting lasers show a 70-degree temperature increase in continuous-wave (CW) operation compared to the conventional [100]-orientated lasers. With modestly reduced Auger recombination of low dimensional material and with improved heat dissipation for laser structure, CW operation with about 10 mW output powers at room temperature for PbSe QW laser is predicted. PbSe epitaxial layer and PbSe/PbSrSe QW structures were, for the first time, successfully grown on [110]-orientated BaF2 substrate by molecular-beam-epitaxy (MBE). The linewidth of the rocking curve from high-resolution x-ray diffraction (HRXRD) measurement for PbSe thin film is 60 arcsec, which indicates high crystalline quality. The dislocation density estimated by the rocking curve is 1.18x107 cm-2. Photoluminescence intensity of [110]-orientated samples was twice as high as that on [111]-orientated BaF2 substrates from the same MBE run.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhisheng Shi, Xiaoling Lu, Fanghai Zhao, Amitava Majumdar, Dewali Ray, Roopa Singh, Swathi Bondili, Donghui Li, and Shikha Jain "Low-dimensional [110]-orientated lead chalcogenides for mid-infrared lasers", Proc. SPIE 5593, Nanosensing: Materials and Devices, (29 December 2004);


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