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29 December 2004 Modeling field effect pH sensor
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Proceedings Volume 5593, Nanosensing: Materials and Devices; (2004) https://doi.org/10.1117/12.580843
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Abstract
The principles behind the chemical field effect sensor are outlined. A block model for the resistance mode of operation is described. Particular attention is paid to the interaction between semiconductor electrostatics, solution electrostatics, and chemical equilibrium at the surface. The site-binding model of the surface potential and the main models of the electrolyte double layer are reviewed. The semiconductor part of the model is generalized to finite channel thickness. Operation is illustrated using pH sensing as an example. The pH sensitivity is analyzed as a function of semiconductor thickness, gate dielectric thickness, ionic strength of the solution, and other factors.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavel Kornilovitch "Modeling field effect pH sensor", Proc. SPIE 5593, Nanosensing: Materials and Devices, (29 December 2004); https://doi.org/10.1117/12.580843
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