850-nm vertical-cavity surface-emitting lasers fabricated by H+ inclined implantation using tungsten wire as mask

Guotong Du; Haisong Wang; Junfeng Song; Yuchun Chang

doi:10.1117/12.570752

20 December 2004 850-nm vertical-cavity surface-emitting lasers fabricated by H⁺ inclined implantation using tungsten wire as mask

Guotong Du, Haisong Wang, Junfeng Song, Yuchun Chang

Author Affiliations +

Proceedings Volume 5594, Physics and Applications of Optoelectronic Devices; (2004) https://doi.org/10.1117/12.570752
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States

Abstract

Fabricated by four times H⁺ inclined implantation using tungsten wire as mask, batch vertical cavity surface emitting lasers with better characters than those of common ion implanted devices were obtained. They have the batch threshold current of less than 1.5mA, the lowest threshold current of 1.2mA which is lower than that of common oxide confinement device product, the largest light output power of about 1mW with simple TO package, and the largest 3dB modulation bandwidth of 4GHz. According to the polarization measurement result, the devices showed good 0° linear polarization character and up to 14dB polarization suppress ratio in the whole linear gain region, which is better than that of common oxide confinement devices. Spectrum measurement result showed that their wavelength was around 835nm, and they operated with single transverse mode in linear gain region. Furthermore, the fabrication technology was simple enough for the industry without photolithography and lift-off steps.

Citation Download Citation

Guotong Du, Haisong Wang, Junfeng Song, and Yuchun Chang "850-nm vertical-cavity surface-emitting lasers fabricated by H⁺ inclined implantation using tungsten wire as mask", Proc. SPIE 5594, Physics and Applications of Optoelectronic Devices, (20 December 2004); https://doi.org/10.1117/12.570752

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