20 December 2004 850-nm vertical-cavity surface-emitting lasers fabricated by H+ inclined implantation using tungsten wire as mask
Author Affiliations +
Proceedings Volume 5594, Physics and Applications of Optoelectronic Devices; (2004) https://doi.org/10.1117/12.570752
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Abstract
Fabricated by four times H+ inclined implantation using tungsten wire as mask, batch vertical cavity surface emitting lasers with better characters than those of common ion implanted devices were obtained. They have the batch threshold current of less than 1.5mA, the lowest threshold current of 1.2mA which is lower than that of common oxide confinement device product, the largest light output power of about 1mW with simple TO package, and the largest 3dB modulation bandwidth of 4GHz. According to the polarization measurement result, the devices showed good 0° linear polarization character and up to 14dB polarization suppress ratio in the whole linear gain region, which is better than that of common oxide confinement devices. Spectrum measurement result showed that their wavelength was around 835nm, and they operated with single transverse mode in linear gain region. Furthermore, the fabrication technology was simple enough for the industry without photolithography and lift-off steps.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guotong Du, Haisong Wang, Junfeng Song, Yuchun Chang, "850-nm vertical-cavity surface-emitting lasers fabricated by H+ inclined implantation using tungsten wire as mask", Proc. SPIE 5594, Physics and Applications of Optoelectronic Devices, (20 December 2004); doi: 10.1117/12.570752; https://doi.org/10.1117/12.570752
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top