20 December 2004 InGaAsP/InP diode laser pumping sources for eye-safe solid state and fiber lasers
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Proceedings Volume 5594, Physics and Applications of Optoelectronic Devices; (2004); doi: 10.1117/12.585540
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Record high power InP-based diode laser pumps operating at 1450 nm and 1850 nm have been fabricated and tested. Single-element 100 mm stripe lasers and 1 cm long arrays (both with cavity length of 2-2.5 mm) are appropriate for fiber and bulk solid-state laser pumping, respectively. The differential quantum efficiency for 1450 nm lasers was 55% and 47% for1850 nm emitters. The maximum CW output powers for 1 cm diode arrays are 42 W for 1450 nm and 14 W for 1850 nm wavelength ranges. The output photon flow (per facet) at maximum current for 1450 nm sources is 40% higher than that for commercial GaAs-based emitters, while for 1850 nm sources it is 50 % lower. A simple estimation shows that the parameters achieved for 1450 nm diode lasers could provide overall efficiency for an 1640 nm Er3+:YAG laser with InP-based pumping comparable with that of a GaAs laser pumped Er3+:YAG laser. More importantly, the expected active media overheating in the case of InP-based pumping is lower by an order of magnitude compared to a GaAs laser pumped Er3+:YAG laser. Data on the lifetime for InP-based diode arrays confirm that high reliability is an additional advantage of long wavelength pumps compared to traditional GaAs-based pumps.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitri Z. Garbuzov, Igor V. Kudryashov, Alexei Komissarov, "InGaAsP/InP diode laser pumping sources for eye-safe solid state and fiber lasers", Proc. SPIE 5594, Physics and Applications of Optoelectronic Devices, (20 December 2004); doi: 10.1117/12.585540; https://doi.org/10.1117/12.585540

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