20 December 2004 Red light VCSEL for high-temperature applications
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Proceedings Volume 5594, Physics and Applications of Optoelectronic Devices; (2004) https://doi.org/10.1117/12.578279
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
This contribution drafts the problems of the AlGaInP material system and its consequences for the laser applications in vertical-cavity surface-emitting lasers (VCSEL). The epitaxial and technological solutions to overcome at least parts of the inherent problems were discussed. Calculated data by a cylindrical heat dissipation model were compared with measured power-current curves of 660nm oxide-confined VCSEL to improve the heat removal out of the device. At high temperatures pulsed operation of a 670nm VCSEL is demonstrated, where we could exceeded 0.5mW at +120°C and at +160°C still 25µW optical output power were achieved.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Jetter, Michael Jetter, Robert Rossbach, Robert Rossbach, Rainer Butendeich, Rainer Butendeich, Ferdinand Scholz, Ferdinand Scholz, Tabitha Ballmann, Tabitha Ballmann, Heinz C. Schweizer, Heinz C. Schweizer, } "Red light VCSEL for high-temperature applications", Proc. SPIE 5594, Physics and Applications of Optoelectronic Devices, (20 December 2004); doi: 10.1117/12.578279; https://doi.org/10.1117/12.578279

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